SRAM 密度提升放缓，对下一代工艺的需求
问题概述
业界普遍关注到传统的密度缩放已放慢，尤其是从 N10 到 N2 的提升仅约 20%，而最新的 A14 芯片仅带来约 2.9% 的 SRAM 密度改进，导致对未来更小工艺的不确定性增加。
痛点标签
- SRAM 密度增长放缓，仅约 2.9% 提升
- 从 N10 到 N2 的密度提升率下降至约 20%
- 对 Angstrom 级工艺的技术可行性和成本产生质疑
待验证问题
- TSMC 在 A14 芯片中实际实现的 SRAM 密度提升是否真的只有约 2.9%？
- 企业在设计新产品时是否主要受限于 SRAM 密度而非逻辑密度？
- Angstrom 级工艺的制造成本是否能够在可接受范围内？
证据
原话
Chip density increase is slowing down. Since N10, density scaling has been 60-80%. N3 to N2 is only 20%. And now N2 to A14 is also only 20%.
原话
In simpler terms, the SRAM density improved by 2.9% (according to ChatGPT). Which is better than it sounds, because SRAM had reached a wall, in terms of density gains, and, chips can be dominated by SRAM in terms of surface area, so this can mean a lot more room for logic, even though that is also getting considerably denser.
原话
Whatever happened to the problem of electrons just hopping around since they are areas of probability rather than particles when you get small enough
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